MODELING AND MEASUREMENT OF MINORITY-CARRIER LIFETIME VERSUS DOPING IN DIFFUSED LAYERS OF N+-P SILICON DIODES

被引：169

作者：

ROULSTON, DJ

ARORA, ND

CHAMBERLAIN, SG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1109/T-ED.1982.20697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：284 / 291

页数：8

共 26 条

[1] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS [J].

ANTONIADIS, DA ;

DUTTON, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :412-422

[2] DIFFUSION LENGTH DETERMINATION IN P-N-JUNCTION DIODES AND SOLAR-CELLS [J].

ARORA, ND ;

CHAMBERLAIN, SG ;

ROULSTON, DJ .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :325-327

[3]

ARORA ND, 1980, UW EE805 U WAT TECH

[4] MEASUREMENT OF CARRIER LIFETIME PROFILES IN DIFFUSED LAYERS OF SEMICONDUCTORS [J].

BALIGA, BJ ;

ADLER, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (04) :472-477

[5] OPTICAL-CONSTANTS OF VARIOUS HEAVILY DOPED PARA-TYPE SILICON-CRYSTALS AND NORMAL-TYPE SILICON-CRYSTALS OBTAINED BY KRAMERS-KRONIG ANALYSIS [J].

BARTA, E .

INFRARED PHYSICS, 1977, 17 (05) :319-329

[6] AUGER-RECOMBINATION IN SI [J].

BECK, JD ;

CONRADT, R .

SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95

[7] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[8] SPECTRAL RESPONSE LIMITATION MECHANISMS OF A SHALLOW JUNCTION N+-P PHOTO-DIODE [J].

CHAMBERLAIN, SG ;

ROULSTON, DJ ;

DESAI, SP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :241-246

[9] QUANTUM EFFICIENCY OF INTERNAL PHOTOELECTRIC EFFECT IN SILICON AND GERMANIUM [J].

CHRISTENSEN, O .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :689-695

[10] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

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