DIRECT TEM STUDY OF THE ROUGHENING OF SIO2 SI INTERFACE INDUCED DURING AES DEPTH PROFILING

被引:1
作者
BARNA, PB
GOSZTOLA, L
ZALAR, A
RASIGNI, M
机构
[1] INST ELECTR & VACUUM TECH, YU-61000 LJUBLJANA, YUGOSLAVIA
[2] UNIV AIX MARSEILLE 3, CTR ETUD COUCHES MINCES, F-13397 MARSEILLE 13, FRANCE
关键词
D O I
10.1002/sia.740090512
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:328 / 328
页数:1
相关论文
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