HO-YAG LASER-PUMPED BY 1.9-MU-M DIODE-LASERS

被引：72

作者：

NABORS, CD ^{[1
]}

OCHOA, J ^{[1
]}

FAN, TY ^{[1
]}

SANCHEZ, A ^{[1
]}

CHOI, HK ^{[1
]}

TURNER, GW ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1995年 / 31卷 / 09期

关键词：

D O I：

10.1109/3.406370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2.1-mu m Ho:YAG laser end pumped by 1.9-mu m diode lasers has generated nearly 0.7-W CW output power, Laser operation was maintained even with Ho:YAG heat sink temperatures in excess of 60 degrees C.

引用

页码：1603 / 1605

页数：3

共 16 条

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