EFFECTS OF DIFFUSED IMPURITY PROFILE ON DC CHARACTERISTICS OF VMOS AND DMOS DEVICES

被引：11

作者：

DAVANZO, DC

COMBS, SR

DUTTON, RW

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

[2] HEWLETT PACKARD CO,INTEGRATED CIRCUIT LAB,PALO ALTO,CA 94304

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1977年 / 12卷 / 04期

关键词：

D O I：

10.1109/JSSC.1977.1050914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：356 / 362

页数：7

共 10 条

[1] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J].

ARNOLD, E ;

ABOWITZ, G .

APPLIED PHYSICS LETTERS, 1966, 9 (09) :344-&

[2] DRIFT VELOCITY SATURATION IN MOS TRANSISTORS [J].

BAUM, G ;

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) :481-+

[3]

DAVANZO DC, 1977, 50132 STANF EL LAB T

[4]

DAVANZO DC, 1976, OCT FAL M EL SOC, V76, P769

[5] ANALYSIS OF IMPURITY ATOM DISTRIBUTION NEAR DIFFUSION MASK FOR A PLANAR P-N JUNCTION [J].

KENNEDY, DP ;

OBRIEN, RR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (03) :179-&

[6]

LEE HS, 1973, SEMICONDUCTOR SILICO, P791

[7] COMPUTER-AIDED-DESIGN MODEL FOR HIGH-VOLTAGE DOUBLE DIFFUSED MOS (DMOS) TRANSISTORS [J].

POCHA, MD ;

DUTTON, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (05) :718-726

[8] EXPERIMENTAL AND THEORETICAL-ANALYSIS OF DOUBLE-DIFFUSED MOS-TRANSISTORS [J].

RODGERS, TJ ;

ASAI, S ;

POCHA, MD ;

DUTTON, RW ;

MEINDL, JD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (05) :322-331

[9] APPLICATION OF MULTILAYER POTENTIAL DISTRIBUTION TO SPREADING RESISTANCE CORRECTION FACTORS [J].

SCHUMANN, PA ;

GARDNER, EE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :87-&

[10]

YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

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