MEASUREMENT OF CRYSTALLINE STRAIN AND ORIENTATION IN DIAMOND FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION

被引:41
作者
SPECHT, ED
CLAUSING, RE
HEATHERLY, L
机构
[1] Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge
基金
美国能源部;
关键词
D O I
10.1557/JMR.1990.2351
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have used x-ray diffraction to characterize diamond films grown in three characteristic morphologies by chemical vapor deposition. Each morphology has a fiber texture about the growth direction; we report the crystal axis aligned in this direction for each morphology. In all cases the average lattice constant agrees with that of bulk diamond; we report the range of strain in each sample. © 1990, Materials Research Society. All rights reserved.
引用
收藏
页码:2351 / 2355
页数:5
相关论文
共 24 条
[1]  
BARRETT CS, 1980, STRUCTURE METALS, P196
[2]   STRUCTURE AND CRYSTAL-GROWTH OF ATMOSPHERIC AND LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON FILMS [J].
BISARO, R ;
MAGARINO, J ;
PROUST, N ;
ZELLAMA, K .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1167-1178
[3]   STRUCTURE-PROPERTY-PROCESS RELATIONSHIPS IN CHEMICAL VAPOR-DEPOSITION CVD [J].
BLOCHER, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (04) :680-686
[4]   ELECTRON-MICROSCOPY OF THE GROWTH FEATURES AND CRYSTAL-STRUCTURES OF FILAMENT ASSISTED CVD DIAMOND FILMS [J].
CLAUSING, RE ;
HEATHERLY, L ;
MORE, KL ;
BEGUN, GM .
SURFACE & COATINGS TECHNOLOGY, 1989, 39 (1-3) :199-210
[5]  
Cullity B. D., 1978, ELEMENTS XRAY DIFFRA, P284
[6]  
Deryagin B. V., 1976, Soviet Physics - Doklady, V21, P676
[7]  
FIELD JE, 1979, PROPERTIES DIAMOND, P308
[8]  
JOUBERT P, 1988, J ELECTROCHEM SOC, V134, P247
[9]   LARGE AREA CHEMICAL VAPOR-DEPOSITION OF DIAMOND PARTICLES AND FILMS USING MAGNETOMICROWAVE PLASMA [J].
KAWARADA, H ;
MAR, KS ;
HIRAKI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (06) :L1032-L1034
[10]   SYNTHESIS OF DIAMONDS BY USE OF MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION - MORPHOLOGY AND GROWTH OF DIAMOND FILMS [J].
KOBASHI, K ;
NISHIMURA, K ;
KAWATE, Y ;
HORIUCHI, T .
PHYSICAL REVIEW B, 1988, 38 (06) :4067-4084