A GALLIUM-ARSENIDE OVERLAPPING-GATE CHARGE-COUPLED DEVICE

被引：9

作者：

NICHOLS, KB

BURKE, BE

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 05期

关键词：

D O I：

10.1109/EDL.1985.26110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：237 / 240

页数：4

共 7 条

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1181-1183

[2] PLANAR SEALED-CHANNEL GALLIUM-ARSENIDE SCHOTTKY-BARRIER CHARGE-COUPLED-DEVICES [J].

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ANDERSON, CL ;

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KAMATH, GS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1183-1188

[3]

COHEN MJ, 1981, DEC IEDM, P622

[4] GAAS AND RELATED HETEROJUNCTION CHARGE-COUPLED-DEVICES [J].

DEYHIMY, I ;

EDEN, RC ;

HARRIS, JS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1172-1180

[5]

HANSELL GL, 1982, THESIS MIT

[6] A 2-PHASE CCD ON GAAS WITH 0.3-MU-M-WIDE ELECTRODE GAPS [J].

KELLNER, W ;

ABLASSMEIER, U ;

KNIEPKAMP, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1195-1197

[7] SPATIAL LIGHT-MODULATION USING ELECTRO-ABSORPTION IN A GAAS CHARGE-COUPLED DEVICE [J].

KINGSTON, RH ;

BURKE, BE ;

NICHOLS, KB ;

LEONBERGER, FJ .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :413-415

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