DETERMINATION OF THE BAND-STRUCTURE OF DISORDERED ALGAINP AND ITS INFLUENCE ON VISIBLE-LASER CHARACTERISTICS

被引：60

作者：

MENEY, AT ^{[1
]}

PRINS, AD ^{[1
]}

PHILLIPS, AF ^{[1
]}

SLY, JL ^{[1
]}

OREILLY, EP ^{[1
]}

DUNSTAN, DJ ^{[1
]}

ADAMS, AR ^{[1
]}

VALSTER, A ^{[1
]}

机构：

[1] PHILIPS OPTOELECTR CTR,5600 JA EINDHOVEN,NETHERLANDS

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1995年 / 1卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1109/2944.401259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using hydrostatic pressure techniques, we have obtained new energies for the X-minina, L-minima and band offsets in GaInP-AlGaInP, Theoretical calculations of the threshold current density in bulk and strained quantum-well visible lasers are shown to be in good agreement with experimental results, obtained as a function of both temperature and hydrostatic pressure, Our results show that heterobarrier leakage current is a dominant limiting factor in the performance at shorter wavelength (similar to 635 mm) operation, but is of less significance for longer wavelength (similar to 675 mn) operation,

引用

页码：697 / 706

页数：10

共 44 条

[1] INFLUENCE OF THE BARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS ALGAAS QUANTUM WELL LASERS [J].