PRECISION OF NONINVASIVE TEMPERATURE-MEASUREMENT BY DIFFUSE-REFLECTANCE SPECTROSCOPY

被引：22

作者：

PEARSALL, TP

SABAN, SR

BOOTH, J

BEARD, BT

JOHNSON, SR

机构：

[1] THERMIONICS NW,PORT TOWNSEND,WA 98368

[2] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER,BC V6T 1Z1,CANADA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1995年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.1146184

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Diffuse reflectance spectroscopy can be used as a noninvasive probe for measurement of temperature in real time. We have measured the precision of this technique to determine the temperature of Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the noninvasive optical technique is less than 1.5 degrees C for GaAs and less than 2.0 degrees C for Si over the temperature range 25 degrees C<T<600 degrees C. This standard deviation compares favorably to that for a type-a thermocouple used in the same measurements: s.d.<1.5 degrees C. These results support the notion that noninvasive optical temperature measurement can be used in semiconductor processing with a precision approaching that of a thermocouple. (C) 1995 American Institute of Physics.

引用

页码：4977 / 4980

页数：4

共 18 条

[1]

ADEL ME, 1992, P SOC PHOTO-OPT INS, V1803, P290

[2]

BOEBEL FG, 1992, P IEEE SEMI ADV SEMI, V67

[3]

COMPANION AL, 1965, DEV APPLIED SPECTROS, V4, P221

[4] ELLIPSOMETRIC MONITORING AND CONTROL OF THE RAPID THERMAL-OXIDATION OF SILICON [J].

CONRAD, KA ;

SAMPSON, RK ;

MASSOUD, HZ ;

IRENE, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2096-2101

[5] ELLIPSOMETRIC METHOD FOR THE MEASUREMENT OF TEMPERATURE AND OPTICAL-CONSTANTS OF INCANDESCENT TRANSITION-METALS [J].

HANSEN, GP ;

KRISHNAN, S ;

HAUGE, RH ;

MARGRAVE, JL .

APPLIED OPTICS, 1989, 28 (10) :1885-1896

[6]

HELLMAN ES, 1986, J CRYST GROWTH, V81, P38

[7]

Johnson S. R., 1995, U. S. patent, Patent No. [5,388,909, 5388909]

[8] SEMICONDUCTOR SUBSTRATE-TEMPERATURE MEASUREMENT BY DIFFUSE REFLECTANCE SPECTROSCOPY IN MOLECULAR-BEAM EPITAXY [J].

JOHNSON, SR ;

LAVOIE, C ;

TIEDJE, T ;

MACKENZIE, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :1007-1010

[9]

KATZER DS, 1993, J VAC SCI TECHNOL B, V11, P103

[10]

KIRILLOV DM, 1992, Patent No. 5118200

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