CHEMICAL TRENDS OF DEEP IMPURITY LEVELS IN COVALENT SEMICONDUCTORS

被引：64

作者：

VOGL, P ^{[1
]}

机构：

[1] GRAZ UNIV, INST THEORET PHYS, A-8010 GRAZ, AUSTRIA

来源：

FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 1981年 / 21卷

关键词：

D O I：

10.1007/BFb0108605

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：191 / 219

页数：29

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