PHOTOVOLTAIC EFFECT IN MIS DIODES OR SCHOTTKY DIODES WITH AN INTERFACIAL LAYER

被引：36

作者：

SINGH, R ^{[1
]}

SHEWCHUN, J ^{[1
]}

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 09期

关键词：

D O I：

10.1063/1.88837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：512 / 514

页数：3

共 29 条

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MILANO, RA .

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[3]

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[4]

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[5]

BRANDHORST HW, 1975, INT ELECTRON DEVICES, P331

[6]

CHARLSON EJ, 1975, J APPL PHYS, V46, P9

[7] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J].

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JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1286-1289

[8]

FONASH SJ, 1975, 11TH P PHOT SPEC C

[9] CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES [J].

GREEN, MA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (04) :349-365

[10] DEPLETION LAYER COLLECTION EFFICIENCY FOR P-N-JUNCTION, SCHOTTKY DIODE, AND SURFACE INSULATOR SOLAR CELLS [J].

GREEN, MA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :547-554

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