SELECTIVE ETCHING TECHNOLOGY FOR 94GHZ GAAS IMPATT DIODES ON DIAMOND HEAT SINKS

被引：30

作者：

EISELE, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 03期

关键词：

D O I：

10.1016/0038-1101(89)90100-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：253 / 257

页数：5

共 25 条

[1] GAAS IMPATT DIODES FOR 60 GHZ [J].

ADLERSTEIN, MG .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :97-98

[2] GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE [J].

ANTYPAS, GA ;

EDGECUMBE, J .

APPLIED PHYSICS LETTERS, 1975, 26 (07) :371-372

[3] INTEGRAL PACKAGING FOR MILLIMETRE-WAVE GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXY [J].

BAYRAKTAROGLU, B ;

SHIH, HD .

ELECTRONICS LETTERS, 1983, 19 (09) :327-329

[4] THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GALLIUM-ARSENIDE USING AVALANCHE NOISE AND PHOTOCURRENT MULTIPLICATION MEASUREMENTS [J].

BULMAN, GE ;

ROBBINS, VM ;

STILLMAN, GE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2454-2466

[5]

CLAASSEN M, 1987, AEU-ARCH ELEKTRON UB, V41, P380

[6] SINGLE-DRIFT FLAT-PROFILE GAAS IMPATT DIODES AT 90 GHZ [J].

EISELE, H ;

FREYER, J .

ELECTRONICS LETTERS, 1986, 22 (04) :224-225

[7]

EISELE H, UNPUB AEU

[8]

ELGABALY MA, 1984, IEEE T MTT, V32

[9]

GROTHE H, 1987, P MIOP 87

[10]

GROTHE H, 1987, AEU, V41, P242

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