ETCHING OF DEEP GROOVES FOR THE PRECISE POSITIONING OF CLEAVES IN SEMICONDUCTOR-LASERS

被引：14

作者：

BOWERS, JE ^{[1
]}

HEMENWAY, BR ^{[1
]}

WILT, DP ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.95609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：453 / 455

页数：3

共 10 条

[1] LARGE OPTICAL CAVITY ALGAAS BURIED HETEROSTRUCTURE WINDOW LASERS
BLAUVELT, H
MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (12) : 1029 - 1031
[2] CLEAVED-COUPLED-CAVITY LASERS WITH LARGE CAVITY LENGTH RATIOS FOR ENHANCED STABILITY
BOWERS, JE
BJORKHOLM, JE
BURRUS, CA
COLDREN, LA
HEMENWAY, BR
WILT, DP
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 821 - 823
[3] BOWERS JE, 1983, ELECTRONIC MATERIALS
[4] IMPROVED LINEARITY AND KINK CRITERIA FOR 1.3-MU-M INGAASP-INP CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE LASERS
DUTTA, NK
WILT, DP
BESOMI, P
DAUTREMONTSMITH, WC
WRIGHT, PD
NELSON, RJ
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 483 - 485
[5] KITAMURA M, 1984, 9 INT SEM LAS C RIO
[6] KOCH TL, 1984, J APPL PHYS, V56, P740
[7] THE PHOTO-ELECTROCHEMICAL OXIDATION OF (100), (111), AND (111) N-INP AND N-GAAS
KOHL, PA
WOLOWODIUK, C
OSTERMAYER, FW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2288 - 2293
[8] SHORT-CAVITY INGAASP INJECTION-LASERS - DEPENDENCE OF MODE SPECTRA AND SINGLE-LONGITUDINAL-MODE POWER ON CAVITY LENGTH
LEE, TP
BURRUS, CA
COPELAND, JA
DENTAI, AG
MARCUSE, D
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (07) : 1101 - 1113
[9] SHORT-COUPLED-CAVITY (SCC) INGAASP INJECTION-LASERS FOR CW AND HIGH-SPEED SINGLE-LONGITUDINAL-MODE OPERATION
LIN, C
BURRUS, CA
LINKE, RA
KAMINOW, IP
KO, JS
DENTAI, AG
LOGAN, RA
MILLER, BI
[J]. ELECTRONICS LETTERS, 1983, 19 (15) : 561 - 562
[10] WAVELENGTH TUNING OF GAINASP-INP INTEGRATED LASER WITH BUTT-JOINTED BUILT-IN DISTRIBUTED BRAGG REFLECTOR
TOHMORI, Y
SUEMATSU, Y
TSUSHIMA, H
ARAI, S
[J]. ELECTRONICS LETTERS, 1983, 19 (17) : 656 - 657

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