DRY, LASER-ASSISTED RAPID HBR ETCHING OF GAAS

被引：42

作者：

BREWER, PD ^{[1
]}

MCCLURE, D ^{[1
]}

OSGOOD, RM ^{[1
]}

机构：

[1] COLUMBIA UNIV,COLUMBIA RADIAT LAB,NEW YORK,NY 10027

来源：

关键词：

D O I：

10.1063/1.96202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：310 / 312

页数：3

共 15 条

[1] PHOTON-ASSISTED DRY ETCHING OF GAAS
BREWER, P
HALLE, S
OSGOOD, RM
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 475 - 477
[2] BREWER P, 1982, LASER CONTROLLED CHE, P179
[3] IMPROVED PERFORMANCE OF GAAS MICROWAVE FIELD-EFFECT TRANSISTORS WITH LOW INDUCTANCE VIA-CONNECTIONS THROUGH SUBSTRATE
DASARO, LA
DILORENZO, JV
FUKUI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1218 - 1221
[4] Deutsch T. F., 1983, Laser Diagnostics and Photochemical Processing for Semiconductor Devices. Proceedings of a Symposium, P225
[5] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP
EHRLICH, DJ
OSGOOD, RM
DEUTSCH, TF
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 698 - 700
[6] Ghandi S.K., 1983, VLSI FABRICATION PRI
[7] GIVARGIZOV E, 1980, J ELECTRON MATER, V9, P833
[8] HALL R, 1984, MATERIALS RES S LASE
[9] CRYSTALLOGRAPHIC ETCHING OF GAAS WITH BROMINE AND CHLORINE PLASMAS
IBBOTSON, DE
FLAMM, DL
DONNELLY, VM
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5974 - 5981
[10] THEORETICAL INVESTIGATION OF HYDROGEN CHEMISORPTION ON GA-CONTAINING III-V-COMPOUNDS
MANGHI, F
BERTONI, CM
CALANDRA, C
MOLINARI, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 371 - 374