THEORY DEFECTS IN SILICON - RECENT CALCULATIONS USING FINITE MOLECULAR CLUSTERS

被引：28

作者：

WATKINS, GD ^{[1
]}

DELEO, GG ^{[1
]}

FOWLER, WB ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90221-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：28 / 38

页数：11

共 45 条

[1] LINEAR-COMBINATION-OF-ATOMIC-ORBITALS, SELF-CONSISTENT-FIELD METHOD FOR THE DETERMINATION OF THE ELECTRONIC-STRUCTURE OF DEEP LEVELS IN SEMICONDUCTORS
ASTIER, M
POTTIER, N
BOURGOIN, JC
[J]. PHYSICAL REVIEW B, 1979, 19 (10) : 5265 - 5276
[2] DEFECTS IN DIAMOND - THE UNRELAXED VACANCY AND SUBSTITUTIONAL NITROGEN
BACHELET, GB
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4736 - 4744
[3] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979
[4] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM
BARAFF, GA
KANE, EO
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686
[5] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
BERNHOLC, J
PANTELIDES, ST
[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789
[6] PSEUDOPOTENTIAL CALCULATIONS OF EFFECT OF DISPLACEMENT UPON IMPURITY LEVELS INTRODUCED BY DEEP DONOR OXYGEN IN GAAS, GAP, SI AND NITROGEN IN DIAMOND
BRAND, S
JAROS, M
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (09) : 875 - 877
[7] JAHN-TELLER-DISTORTED NITROGEN DONOR IN LASER-ANNEALED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1627 - 1629
[8] THEORETICAL-STUDY OF THE SI-A CENTER
CALDAS, MJ
LEITE, JR
FAZZIO, A
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (02): : K109 - K111
[9] LOCALIZED DESCRIPTION OF ELECTRONIC-STRUCTURE OF COVALENT SEMICONDUCTORS .1. PERFECT CRYSTALS
CARTLING, BG
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (19): : 3171 - 3182
[10] CARTLING BG, 1975, J PHYS C SOLID STATE, V8, P3183, DOI 10.1088/0022-3719/8/19/018

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