TRANSVERSE ELECTRIC AND TRANSVERSE MAGNETIC-POLARIZATION ACTIVE INTERSUBBAND TRANSITIONS IN NARROW INGAAS QUANTUM-WELLS

被引：44

作者：

PENG, LH ^{[1
]}

SMET, JH ^{[1
]}

BROEKAERT, TPE ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 17期

关键词：

D O I：

10.1063/1.108312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarization-resolved infrared spectroscopy has been used to demonstrate the existence of transverse electric (TE) and transverse magnetic (TM) active intersubband transitions in lattice-matched, unstrained In0.53Ga0.47As/In0.52Al0.48As and strained In0.7Ga0.3As/AlAs quantum wells grown by molecular beam epitaxy on Fe-doped semi-insulating InP (001) substrates. It is shown that a previously reported intersubband absorption peak at 0.3 eV in a 4.0-nm wide, lattice-matched InGaAs/InAlAs quantum well can be resolved into two peaks active for TE and TM polarizations, respectively, with a 10 meV splitting between them. Bound to quasibound state transition at 0.59 eV (2.1 mum) for a narrow, 2.8-nm-wide InGaAs quantum well has also been observed. Group symmetry analyses considering D2d symmetry, tetragonal perturbation of local crystal and strain deformation potential, and interface roughness of the ternary quantum-well structure is proposed to explain the polarization selection rules, and the Stark splitting in the intersubband absorption.

引用

页码：2078 / 2080

页数：3

共 17 条

[1] EXPERIMENTAL AND THEORETICAL-STUDIES OF THE PERFORMANCE OF QUANTUM-WELL INFRARED PHOTODETECTORS [J].

ANDREWS, SR ;

MILLER, BA .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) :993-1003

[2] INTERSUBBAND ABSORPTION IN IN0.53GA0.47AS/IN0.52AL0.48AS MULTIPLE QUANTUM-WELLS [J].

ASAI, H ;

KAWAMURA, Y .

PHYSICAL REVIEW B, 1991, 43 (06) :4748-4759

[3] INTERSUBBAND ABSORPTION IN HIGHLY STRAINED INGAAS/INALAS MULTIQUANTUM WELLS [J].

ASAI, H ;

KAWAMURA, Y .

APPLIED PHYSICS LETTERS, 1990, 56 (08) :746-748

[4]

ASAI H, 1992, FOURTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, P493, DOI 10.1109/ICIPRM.1992.235556

[5] CARRIER-INDUCED CHANGE IN REFRACTIVE-INDEX OF INP, GAAS, AND INGAASP [J].

BENNETT, BR ;

SOREF, RA ;

DELALAMO, JA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (01) :113-122

[6]

ELBERT D, 1992, J APPL PHYS, V71, P6199

[7] LATTICE-MATCHED INGAASP/INP LONG-WAVELENGTH QUANTUM-WELL INFRARED PHOTODETECTORS [J].

GUNAPALA, SD ;

LEVINE, BF ;

RITTER, D ;

HAMM, RA ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1992, 60 (05) :636-638

[8] INGAAS/INALAS MULTIQUANTUM WELL INTERSUBBAND ABSORPTION AT A WAVELENGTH OF LAMBDA=4.4 MU-M [J].

LEVINE, BF ;

CHO, AY ;

WALKER, J ;

MALIK, RJ ;

KLEINMAN, DA ;

SIVCO, DL .

APPLIED PHYSICS LETTERS, 1988, 52 (18) :1481-1483

[9] MEASUREMENTS OF INTERSUBBAND PHOTOCURRENTS FROM QUANTUM-WELLS IN ASYMMETRICAL-DOUBLE-BARRIER STRUCTURES [J].

LIU, HC ;

BUCHANAN, M ;

WASILEWSKI, ZR .

PHYSICAL REVIEW B, 1991, 44 (03) :1411-1414

[10] INTERSUBBAND ABSORPTION IN A MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS MULTIPLE QUANTUM WELL STRUCTURE [J].

LOBENTANZER, H ;

KONIG, W ;

STOLZ, W ;

PLOOG, K ;

ELSAESSER, T ;

BAUERLE, RJ .

APPLIED PHYSICS LETTERS, 1988, 53 (07) :571-573

← 1 2 →