TRANSVERSE ELECTRIC AND TRANSVERSE MAGNETIC-POLARIZATION ACTIVE INTERSUBBAND TRANSITIONS IN NARROW INGAAS QUANTUM-WELLS

被引：44

作者：

PENG, LH ^{[1
]}

SMET, JH ^{[1
]}

BROEKAERT, TPE ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 17期

关键词：

D O I：

10.1063/1.108312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarization-resolved infrared spectroscopy has been used to demonstrate the existence of transverse electric (TE) and transverse magnetic (TM) active intersubband transitions in lattice-matched, unstrained In0.53Ga0.47As/In0.52Al0.48As and strained In0.7Ga0.3As/AlAs quantum wells grown by molecular beam epitaxy on Fe-doped semi-insulating InP (001) substrates. It is shown that a previously reported intersubband absorption peak at 0.3 eV in a 4.0-nm wide, lattice-matched InGaAs/InAlAs quantum well can be resolved into two peaks active for TE and TM polarizations, respectively, with a 10 meV splitting between them. Bound to quasibound state transition at 0.59 eV (2.1 mum) for a narrow, 2.8-nm-wide InGaAs quantum well has also been observed. Group symmetry analyses considering D2d symmetry, tetragonal perturbation of local crystal and strain deformation potential, and interface roughness of the ternary quantum-well structure is proposed to explain the polarization selection rules, and the Stark splitting in the intersubband absorption.

引用

页码：2078 / 2080

页数：3

共 17 条

[11] NORMAL INCIDENCE INFRARED DETECTOR USING P-TYPE SIGE SI MULTIPLE QUANTUM-WELLS [J].