THIN-FILM ZNS-MN AC-ELECTROLUMINESCENT DEVICE WITH A GE LAYER

被引：8

作者：

KOBAYASHI, H ^{[1
]}

TUETA, RJ ^{[1
]}

MENN, R ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 10期

关键词：

D O I：

10.1109/T-ED.1982.20925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1626 / 1630

页数：5

共 22 条

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[8] VOLTAGE DEPENDENCE OF BRIGHTNESS IN RARE-EARTH DOPED ELECTROLUMINESCENT ZNS THIN-FILM DEVICES [J].

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[9] COMPARISON OF ELECTROLUMINESCENT TA-TA2O5-ZNS - TB3+-SIO2-AU FILMS WITH TA-TA2O5-ZNS - TB3+-AU FILMS [J].

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[10] ELECTRON INJECTION MECHANISM OF ELECTROLUMINESCENT ZNS - TB3+ FILMS [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (12) :1854-1861

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