HYDROGEN-INDUCED CONTAMINATION OF III-V COMPOUND SURFACES

被引：17

作者：

PROIX, F

SEBENNE, CA

CHERCHOUR, M

MHAMEDI, O

LACHARME, JP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：898 / 902

页数：5

共 15 条

[1] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J].

BOLMONT, D ;

CHEN, P ;

SEBENNE, CA ;

PROIX, F .

PHYSICAL REVIEW B, 1981, 24 (08) :4552-4559

[2] INTERACTION OF IONIZED HYDROGEN WITH CLEAVED GAAS - COMPARISON WITH ATOMIC-HYDROGEN INTERACTION [J].

CHERCHOUR, M ;

PROIX, F ;

SEBENNE, C .

REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (05) :285-291

[3] ORIENTATION AND TEMPERATURE-DEPENDENCE OF H2S ADSORPTION ON CYLINDRICAL GE AND GAAS SAMPLES [J].

KUHR, HJ ;

RANKE, W ;

FINSTER, J .

SURFACE SCIENCE, 1986, 178 (1-3) :171-178

[4] SILVER CONTACT ON GAAS (001) AND INP (001) [J].

MASSIES, J ;

DEVOLDERE, P ;

LINH, NT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1353-1357

[5] INTERACTION OF ATOMIC-HYDROGEN WITH CLEAVED INP .1. THE ADSORPTION STAGE [J].

MHAMEDI, O ;

PROIX, F ;

SEBENNE, CA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (02) :193-198

[6] EFFECTS OF ATOMIC-HYDROGEN ON THE SURFACE-PROPERTIES OF CLEAVED GAAS(110) [J].

MHAMEDI, O ;

PROIX, F ;

SEBENNE, C .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (07) :418-427

[7]

MHAMEDI O, IN PRESS SURF SCI

[8] INTERACTION OF OXYGEN WITH CLEAVED GAAS - INFLUENCE OF THE CLEAVAGE DEFECTS [J].

PROIX, F ;

HOUZAY, F .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (09) :1845-1856

[9] A PHOTOEMISSION BLACK-HOLE IN HEAVILY HYDROGENATED GAAS(110) SURFACES [J].

PROIX, F ;

MHAMEDI, O ;

SEBENNE, CA .

SOLID STATE COMMUNICATIONS, 1986, 57 (02) :133-136

[10] EFFECTS OF VACUUM ANNEALING ON THE ELECTRONIC-PROPERTIES OF CLEAVED GAAS [J].

PROIX, F ;

AKREMI, A ;

ZHONG, ZT .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (28) :5449-5463

← 1 2 →