EFFECTS OF VACUUM ANNEALING ON THE ELECTRONIC-PROPERTIES OF CLEAVED GAAS

被引:37
作者
PROIX, F
AKREMI, A
ZHONG, ZT
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 28期
关键词
D O I
10.1088/0022-3719/16/28/013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:5449 / 5463
页数:15
相关论文
共 33 条
[1]   ELECTROREFLECTANCE MEASUREMENTS OF LATTICE DAMAGE IN ION-IMPLANTED GAAS [J].
ANDERSON, WJ ;
PARK, YS .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3094-3098
[2]   SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS [J].
BACHELET, GB ;
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1981, 24 (02) :915-925
[3]   METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].
BACHRACH, RZ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343
[4]   GE-GAAS(110) INTERFACE FORMATION [J].
BAUER, RS ;
MCMENAMIN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449
[5]   ROOM-TEMPERATURE FORMATION OF THE AG/GAAS (110) INTERFACE [J].
BOLMONT, D ;
CHEN, P ;
PROIX, F ;
SEBENNE, CA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (16) :3639-3648
[6]   ELECTRONIC-PROPERTIES OF GA/GAAS(110) UPON INTERFACE FORMATION [J].
BOLMONT, D ;
CHEN, P ;
SEBENNE, CA .
SURFACE SCIENCE, 1982, 117 (1-3) :417-425
[7]  
BOLMONT D, 1983, 16TH P INT C PHYS SE, V2, P816
[8]  
CHEN P, 1983, UNPUB SURF SCI
[9]   BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843