DX CENTER IN GA1-XALXAS ALLOYS

被引：40

作者：

BOURGOIN, JC

FENG, SL

VONBARDELEBEN, HJ

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.40.7663

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7663 / 7670

页数：8

共 49 条

[21] A PHOTOLUMINESCENCE STUDY OF THE DONOR STRUCTURE IN ALXGA1-XAS [J].

HENNING, JCM ;

ANSEMS, JPM ;

ROKSNOER, PJ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (04) :361-364

[22] DEEP LEVELS AND A POSSIBLE D-X-LIKE CENTER IN MOLECULAR-BEAM EPITAXIAL INXAL1-XAS [J].

HONG, WP ;

DHAR, S ;

BHATTACHARYA, PK ;

CHIN, A .

JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) :271-274

[23]

Khachaturyan K., 1989, Materials Science Forum, V38-41, P1067, DOI 10.4028/www.scientific.net/MSF.38-41.1067

[24] METASTABLE DONOR STATES IN TE- DOPED GA1-XALXSB COMPOUNDS [J].

KONCZEWICZ, L ;

LITWINSTASZEWSKA, E ;

POROWSKI, S ;

ILLER, A ;

AULOMBARD, RL ;

ROBERT, JL ;

JOULLIE, A .

PHYSICA B & C, 1983, 117 (MAR) :92-95

[25] DEEP TRAPS IN GAAS UNDER HYDROSTATIC-PRESSURE [J].

KUMAGAI, O ;

WUNSTEL, K ;

JANTSCH, W .

SOLID STATE COMMUNICATIONS, 1982, 41 (01) :89-92

[26] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

KIMERLING, LC .

PHYSICAL REVIEW B, 1977, 15 (10) :4874-4882

[27]

LANG DV, 1986, DEEP CTR SEMICONDUCT, pCH7

[28] PHOTOIONIZATION CROSS-SECTION OF THE DX CENTER IN SI-DOPED ALXGA1-XAS [J].

LEGROS, R ;

MOONEY, PM ;

WRIGHT, SL .

PHYSICAL REVIEW B, 1987, 35 (14) :7505-7510

[29] INVESTIGATION OF THE DX CENTER IN HEAVILY DOPED N-TYPE GAAS [J].

MAUDE, DK ;

PORTAL, JC ;

DMOWSKI, L ;

FOSTER, T ;

EAVES, L ;

NATHAN, M ;

HEIBLUM, M ;

HARRIS, JJ ;

BEALL, RB .

PHYSICAL REVIEW LETTERS, 1987, 59 (07) :815-818

[30] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].

MIZUTA, M ;

TACHIKAWA, M ;

KUKIMOTO, H ;

MINOMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L143-L146

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