NEW DIFFRACTION GRATING PROFILES IN INP FOR DFB LASERS AND INTEGRATED-OPTICS

被引：3

作者：

WESTBROOK, LD

NELSON, AW

FIDDYMENT, PJ

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 25-2期

关键词：

D O I：

10.1049/el:19830730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1076 / 1077

页数：2

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共 4 条

[1] COMBINED DRY AND WET ETCHING TECHNIQUES TO FORM PLANAR (011) FACETS IN GAINASP-INP DOUBLE HETEROSTRUCTURES [J].

COLDREN, LA ;

FURUYA, K ;

MILLER, BI ;

RENTSCHLER, JA .

ELECTRONICS LETTERS, 1982, 18 (05) :235-237

[2] LOW THRESHOLD CURRENT CW OPERATION OF GAINASP INP BURIED HETEROSTRUCTURE DISTRIBUTED BRAGG-REFLECTOR INTEGRATED-TWIN-GUIDE LASER EMITTING AT 1.5-1.6 MU-M [J].

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ARAI, S ;

KOYAMA, F ;

KISHINO, K ;

YOSHIZAWA, S ;

WATANABE, T ;

SUEMATSU, Y .

ELECTRONICS LETTERS, 1981, 17 (25-2) :967-968

[3] ROOM-TEMPERATURE CW OPERATION OF DISTRIBUTED-FEEDBACK BURIED-HETEROSTRUCTURE INGAASP INP LASERS EMITTING AT 1.57 MU-M [J].

UTAKA, K ;

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y .

ELECTRONICS LETTERS, 1981, 17 (25-2) :961-963

[4] HIGH-QUALITY INP SURFACE CORRUGATIONS FOR 1.55-MU-M INGAASP DFB LASERS FABRICATED USING ELECTRON-BEAM LITHOGRAPHY [J].

WESTBROOK, LD ;

NELSON, AW ;

DIX, C .

ELECTRONICS LETTERS, 1982, 18 (20) :863-865