MEASUREMENT OF MOBILITY-LIFETIME PRODUCT IN HYDROGENATED AMORPHOUS-SILICON P-I-N-TYPE DIODES

被引：12

作者：

KONENKAMP, R ^{[1
]}

HERMANN, AM ^{[1
]}

MADAN, A ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期

关键词：

SEMICONDUCTING SILICON - Charge Carriers;

D O I：

10.1063/1.95594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have applied the junction recovery technique to different configurations of hydrogenated amorphous silicon type diodes and show that the recovered charge consists predominantly of holes. The technique is used for the measurement of the mobility-lifetime product for recombination, which was found to be dependent upon the level and type of doping.

引用

页码：405 / 407

页数：3

共 11 条

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[9] SILVER M, 1984, B AM PHYS SOC, V29, P507
[10] THE LIFETIME OF INJECTED CARRIERS IN AMORPHOUS-SILICON P-N-JUNCTIONS
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