RENORMALIZED-DEFECT-MOLECULE APPROACH TO THE THEORY OF SUBSTITUTIONAL TRANSITION-METAL IONS IN SEMICONDUCTORS

被引：55

作者：

PICOLI, G ^{[1
]}

CHOMETTE, A ^{[1
]}

LANNOO, M ^{[1
]}

机构：

[1] INST SUPER ELECTR NORD,CNRS,SURFACES & INTERFACES LAB,3 RUE FRANCOIS BAES,F-59056 LILLE,FRANCE

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.30.7138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7138 / 7147

页数：10

共 38 条

[1] ELECTRONIC-STRUCTURE OF MOTT INSULATORS
BRANDOW, BH
[J]. ADVANCES IN PHYSICS, 1977, 26 (05) : 651 - 808
[2] CR2+(3D4) ABSORPTION IN GAAS
CLERJAUD, B
HENNEL, AM
MARTINEZ, G
[J]. SOLID STATE COMMUNICATIONS, 1980, 33 (09) : 983 - 985
[3] COLOUR CENTRES IN IRRADIATED DIAMONDS .1.
COULSON, CA
KEARSLEY, MJ
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227): : 433 - 454
[4] LEVEL POSITIONS OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON
DELEO, GG
WATKINS, GD
FOWLER, WB
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 4972 - 4980
[5] THEORY OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON
DELEO, GG
WATKINS, GD
FOWLER, WB
[J]. PHYSICAL REVIEW B, 1981, 23 (04): : 1851 - 1858
[6] MANY-ELECTRON EFFECTS FOR INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON
DELEO, GG
WATKINS, GD
FOWLER, WB
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 4962 - 4971
[7] LUMINESCENCE PROCESSES AT CHROMIUM IN GAAS
DEVEAUD, B
PICOLI, G
LAMBERT, B
MARTINEZ, G
[J]. PHYSICAL REVIEW B, 1984, 29 (10): : 5749 - 5763
[8] FRIEDEL J, 1969, PHYS MET, P340
[9] Griffith J. S., 1971, THEORY TRANSITION ME
[10] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS
HALDANE, FDM
ANDERSON, PW
[J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2553 - 2559