INFLUENCE OF DOPING ON THE STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF AMORPHOUS AND MICROCRYSTALLINE SILICON-CARBIDE

被引:148
作者
DEMICHELIS, F
PIRRI, CF
TRESSO, E
机构
[1] Dipartimento di Fisica, Politecnico di Torino, 10129 Torino
关键词
D O I
10.1063/1.351742
中图分类号
O59 [应用物理学];
学科分类号
摘要
Amorphous and microcrystalline silicon carbide, undoped and doped, has attracted a great attention for its optical and electrical properties. The introduction of dopant atoms in the network of amorphous films permits the control of electrical properties but it gives rise to a decreasing of the optical pp. Microcrystalline SiC:H films seem to provide films having a wide range of electrical conductivities without drastic change in the optical gap. This paper presents the results of a detailed study on the effects of boron and phosphorus doping on structural, optical, and electrical properties of a-SiC:H and mu-c-SiC:H films. An optical gap as high as 2.1 eV, together with a conductiVity of 10(-3) OMEGA--1 cm-1, are shown by doped mu-c-SiC:H.
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页码:1327 / 1333
页数:7
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