PHYSICAL-PROPERTIES OF UNDOPED AND DOPED HYDROGENATED AMORPHOUS-SILICON CARBIDE

被引：21

作者：

DEMICHELIS, F

PIRRI, CF

TRESSO, E

DELLAMEA, G

RIGATO, V

RAVA, P

机构：

[1] CONSORZIO INFM, PADUA, ITALY

[2] UNIV TRENTO, I-38050 TRENT, ITALY

[3] ELETTRORAVA SPA, TURIN, ITALY

[4] UNIV PADUA, DIPARTIMENTO FIS, I-35100 PADUA, ITALY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 12期

关键词：

D O I：

10.1088/0268-1242/6/12/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A systematic study on the basic characteristics of p-type a-SiC:H films doped with B2H6 and n-type doped with PH3 is presented. The effect of doping on the optical and electrical properties of the films has been examined. The results obtained on energy gap, spin density, Urbach energy and integral of excess absorption suggest that the phosphorus dopant atoms introduce fewer additional defects than does boron. The difference in the behaviour of the two types of doping has been attributed to the chemistry of boron and phosphorus.

引用

页码：1141 / 1146

页数：6

共 25 条

[1] ADLER D, 1984, SEMICONDUCTOR SEMIME, V21
[2] PHOSPHORUS DOPING AND PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON CARBON ALLOY-FILMS
BASU, N
GANGULY, G
RAY, S
BARUA, AK
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (10): : 1776 - 1779
[3] SIMULTANEOUS NUCLEAR MICROANALYSIS OF NITROGEN AND OXYGEN ON SILICON
BERTI, M
DRIGO, AV
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 201 (2-3): : 473 - 479
[4] SENSITIVE PHOTOTHERMAL DEFLECTION TECHNIQUE FOR MEASURING ABSORPTION IN OPTICALLY THIN MEDIA
BOCCARA, AC
FOURNIER, D
JACKSON, W
AMER, NM
[J]. OPTICS LETTERS, 1980, 5 (09) : 377 - 379
[5] Chu W.-K., 1978, BACKSCATTERING SPECT
[6] SPIN-RESONANCE SPECTROSCOPY OF HYDROGENATED AMORPHOUS C-SI-GE ALLOYS
DEMICHELIS, F
PIRRI, CF
GIAMELLO, E
[J]. SOLID STATE COMMUNICATIONS, 1990, 74 (02) : 119 - 122
[7] NEW APPROACH TO OPTICAL ANALYSIS OF ABSORBING THIN SOLID FILMS
DEMICHELIS, F
KANIADAKIS, G
TAGLIAFERRO, A
TRESSO, E
[J]. APPLIED OPTICS, 1987, 26 (09): : 1737 - 1740
[8] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON
DERSCH, H
STUKE, J
BEICHLER, J
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274
[9] DISCHLER B, 1985, 7TH P INT S PLASM CH, P45
[10] HYDROGEN CONTENT IN A-SIC-H FILMS PREPARED BY PLASMA DECOMPOSITION OF SILANE AND METHANE OR ETHYLENE
FUJIMOTO, F
OOTUKA, A
KOMAKI, K
IWATA, Y
YAMANE, I
YAMASHITA, H
HASHIMOTO, Y
TAWADA, Y
NISHIMURA, K
OKAMOTO, H
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (07): : 810 - 814

← 1 2 3 →