CHARACTERIZATION OF SILICON IMPLANTED WITH FOCUSED ION-BEAM BY RAMAN MICROPROBE

被引：13

作者：

MIZOGUCHI, K ^{[1
]}

NAKASHIMA, S ^{[1
]}

FUJII, A ^{[1
]}

MITSUISHI, A ^{[1
]}

MORIMOTO, H ^{[1
]}

ONODA, H ^{[1
]}

KATO, T ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 06期

关键词：

D O I：

10.1143/JJAP.26.903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：903 / 907

页数：5

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