HIGH ALUMINUM COMPOSITION ALGAINP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - IMPURITY DOPING AND 590 NM (ORANGE) ELECTROLUMINESCENCE

被引：9

作者：

HINO, I

KOBAYASHI, K

SUZUKI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 09期

关键词：

D O I：

10.1143/JJAP.23.L746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L746 / L748

页数：3

相关论文

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[2] ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
HINO, I
GOMYO, A
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SUZUKI, T
NISHIDA, K
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 987 - 989
[3] HINO I, UNPUB J CRYST GROWTH
[4] 0.66 MU-M ROOM-TEMPERATURE OPERATION OF INGAAIP DH LASER-DIODES GROWN BY MBE
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IKEGAMI, T
[J]. ELECTRONICS LETTERS, 1983, 19 (05) : 163 - 165
[5] SUZUKI T, 1982, JPN J APPL PHYS 2, V21, pL731, DOI 10.1143/JJAP.21.L731