OBSERVATION OF SILICON-WAFER EMISSIVITY IN RAPID THERMAL-PROCESSING CHAMBERS FOR PYROMETRIC TEMPERATURE MONITORING

The emissivity of silicon wafers in a rapid thermal processing chamber has been measured as a function of the wafer temperature. Wafers with different surface roughness and layers have been studied. For transparent wafers, both sides of the wafer affect the emissivity. This emissivity is not only affected by surface roughness, but also by the layers deposited on the wafer. It has also been observed that while the emissivity increases rapidly as the temperature increases from its room value to 600°C, the emissivity decreases with a slope of -8.89×10-5°C-1 for temperatures larger than 600°C.