SPECTRAL EMISSIVITY OF SILICON

被引：232

作者：

SATO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1967年 / 6卷 / 03期

关键词：

D O I：

10.1143/JJAP.6.339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：339 / &

共 14 条

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[8] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

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MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[9] THE INFRA-RED EMISSIVITIES OF INDIUM ANTIMONIDE AND GERMANIUM [J].

MOSS, TS ;

HAWKINS, TDH .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (464) :270-273

[10] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J].

PHILIPP, HR ;

TAFT, EA .

PHYSICAL REVIEW, 1960, 120 (01) :37-38

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