SCREENING AND ELEMENTARY EXCITATIONS IN NARROW-CHANNEL SEMICONDUCTOR MICROSTRUCTURES

被引：221

作者：

DASSARMA, S

LAI, WY

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.32.1401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1401 / 1404

页数：4

共 28 条

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