VACANCY-MODEL-BASED ELECTRONIC-STRUCTURE OF THE PT- IMPURITY IN SILICON

被引：9

作者：

ANDERSON, FG

DELERUE, C

LANNOO, M

ALLAN, G

机构：

[1] Laboratoire de Physique des Solides, Institut Supérieur d'Electronique du Nord, 59046 Lille Cedex

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.44.10925

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present here a detailed model for the electronic structure of the Pt- impurity in silicon that is consistent with both experimental results and the results of self-consistent empirical tight-binding Green's-function calculations for the on-center and the distorted Pt impurities. This model is based on the electronic structure for this impurity as prescribed by Watkins' vacancy model.

引用

页码：10925 / 10928

页数：4

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