A NEW THEORETICAL-MODEL FOR A P-N-JUNCTION REALISTIC DIODE

被引：9

作者：

KHAN, WI ^{[1
]}

机构：

[1] UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS2 9JT,W YORKSHIRE,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 12期

关键词：

SEMICONDUCTOR DEVICES - Modeling - SEMICONDUCTOR MATERIALS - Charge Carriers;

D O I：

10.1016/0038-1101(87)90045-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Attempts have been made to give a new theoretical model for semiconductor bipolar realistic diodes. The fact that the realistic devices are not completely free from the effects of traps, defects, band to band radiative and non-radiative (Auger effect) transitions etc. , leads to the mathematical solutions which show oscillatory variations (between two positive values) in the carrier density distributions. This leads to the deviation of a diode characteristics from those of the ideal diode. An application of the model has been made to a p-n junction. Experimental evidence of this deviation in Schottky heterostructures found in the literature can act as a direct support of the model.

引用

页码：1221 / 1225

页数：5

共 14 条

[1] RECOMBINATION IN THYRISTORS AND RECTIFIERS FROM SILICON - ITS EFFECT ON POROSITY FACTOR AND LIBERATION TIME RELATION [J].

BURTSCHER, J ;

DANNHAUSER, F ;

KRAUSSE, J .

SOLID-STATE ELECTRONICS, 1975, 18 (01) :35-63

[2]

Gafiichuk V. V., 1985, Soviet Physics - Solid State, V27, P818

[3]

GHANDHI SK, 1977, SEMICONDUCTOR POWER, P2

[4] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[5] ON THE MAGNETIC INHOMOGENEITY BASED ON LANDAU-GINZBURG THEORY [J].

KHAN, WI .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (16) :2969-2978

[6] DETERMINATION OF HETEROJUNCTION BAND OFFSETS BY CAPACITANCE-VOLTAGE PROFILING THROUGH NONABRUPT ISOTYPE HETEROJUNCTIONS [J].

KROEMER, H .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :504-505

[7] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

KROEMER, H ;

CHIEN, WY ;

HARRIS, JS ;

EDWALL, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :295-297

[8] RECOMBINATION-INDUCED NONEQUILIBRIUM PHASE-TRANSITIONS IN SEMICONDUCTORS [J].

LANDSBERG, PT ;

PIMPALE, A .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (07) :1243-1252

[9]

LECROISSETTE D, 1965, TRANSISTORS, P94

[10] THE L-H JUNCTION AS AN ELEMENT OF THE SEMICONDUCTOR-DEVICE [J].

PULTORAK, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (01) :11-22

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