SINGLE-EVENT DYNAMICS OF HIGH-PERFORMANCE HBTS AND GAAS-MESFETS

被引：21

作者：

MCMORROW, D ^{[1
]}

WEATHERFORD, T ^{[1
]}

KNUDSON, AR ^{[1
]}

TRAN, LH ^{[1
]}

MELINGER, JS ^{[1
]}

CAMPBELL, AB ^{[1
]}

机构：

[1] SFA INC,LANDOVER,MD

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV alpha-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with similar to 90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. We show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

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收藏

页码：1858 / 1866

页数：9

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