A COMPARISON OF CHARGE COLLECTION EFFECTS BETWEEN GAAS-MESFETS AND III-V HFETS

被引：8

作者：

HUGHLOCK, B

JOHNSTON, A

WILLIAMS, T

HARRANG, J

机构：

[1] Boeing Defense and Space Group, Seattle

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ion-induced gate edge effect and excess charge collection effect present in GaAs MESFETs are not present in InP and GaAs HFETs. An SEU characterization study shows that these devices can provide an SEU rate which is lower than unhardened CMOS.

引用

页码：1642 / 1646

页数：5

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