EXPERIMENTAL AND THEORETICAL-STUDY OF ALPHA-PARTICLE INDUCED CHARGE COLLECTION IN GAAS-FETS

被引：12

作者：

ANDERSON, WT

KNUDSON, AR

BUOT, FA

GRUBIN, HL

KRESKOVSKY, JP

CAMPBELL, AB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1326 / 1331

页数：6

共 13 条

[1] DEGRADATION IN GAAS-FETS RESULTING FROM ALPHA-PARTICLE IRRADIATION [J].

ANDERSON, WT ;

CAMPBELL, AB ;

KNUDSON, AR ;

CHRISTOU, A ;

WILKINS, BR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1124-1127

[2]

Blakemore J.S., 1982, J APPL PHYS, V53

[3] NUMERICAL-SIMULATION OF HOT-ELECTRON EFFECTS ON SOURCE-DRAIN BURNOUT CHARACTERISTICS OF GAAS POWER FETS [J].

BUOT, FA ;

SLEGER, KJ .

SOLID-STATE ELECTRONICS, 1984, 27 (12) :1067-1081

[4] A MECHANISM FOR RADIATION-INDUCED DEGRADATION IN GAAS FIELD-EFFECT TRANSISTORS [J].

BUOT, FA ;

ANDERSON, WT ;

CHRISTOU, A ;

CAMPBELL, AB ;

KNUDSON, AR .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :581-590

[5]

GRUBIN HL, 1983, SRA R82940001F2 REP

[6] CHARGE COLLECTION MEASUREMENTS ON GAAS DEVICES FABRICATED ON SEMI-INSULATING SUBSTRATES [J].

HOPKINS, MA ;

SROUR, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1116-1120

[7] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J].

HSIEH, CM ;

MURLEY, PC ;

OBRIEN, RR .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :103-105

[8]

KRESKOVSKY JP, 1984, SRA R84940003R REP

[9]

KRESKOVSKY JP, 1986, IN PRESS J COMP PHYS

[10]

MCLEAN FB, 1982, IEEE T NUCL SCI, V29, P2018

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