DEGRADATION IN GAAS-FETS RESULTING FROM ALPHA-PARTICLE IRRADIATION

被引：6

作者：

ANDERSON, WT

CAMPBELL, AB

KNUDSON, AR

CHRISTOU, A

WILKINS, BR

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1124 / 1127

页数：4

共 8 条

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[8] SINGLE EVENT UPSET MEASUREMENTS OF GAAS E-JFET RAMS [J].

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