GATE CHARGE COLLECTION AND INDUCED DRAIN CURRENT IN GAAS-FETS

被引：26

作者：

FLESNER, LD

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4110 / 4114

页数：5

共 9 条

[1] DEGRADATION IN GAAS-FETS RESULTING FROM ALPHA-PARTICLE IRRADIATION [J].

ANDERSON, WT ;

CAMPBELL, AB ;

KNUDSON, AR ;

CHRISTOU, A ;

WILKINS, BR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1124-1127

[2] TRANSIENT RADIATION EFFECTS IN GAAS DEVICES - BULK CONDUCTION AND CHANNEL MODULATION PHENOMENA IN D-MESFET, E-JFET, AND N+-SI-N+ STRUCTURES [J].

FLESNER, LD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1502-1507

[3] INTEGRATED PHOTOCONDUCTIVE DETECTOR AND WAVE-GUIDE STRUCTURE [J].

GAMMEL, JC ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :149-151

[4] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[5] CHARGE COLLECTION MEASUREMENTS ON GAAS DEVICES FABRICATED ON SEMI-INSULATING SUBSTRATES [J].

HOPKINS, MA ;

SROUR, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1116-1120

[6] CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY [J].

LEAMY, HJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :R51-R80

[7] CHARGE COLLECTION IN GA/AS TEST STRUCTURES [J].

MCNULTY, PJ ;

ABDELKADER, W ;

CAMPBELL, AB ;

KNUDSON, AR ;

SHAPIRO, P ;

EISEN, F ;

ROOSILD, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1128-1131

[8]

TAIRA K, 1984 IEDM, P201

[9] INVESTIGATION OF MINORITY-CARRIER DIFFUSION LENGTHS BY ELECTRON-BOMBARDMENT OF SCHOTTKY BARRIERS [J].

WU, CJ ;

WITTRY, DB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2827-2836

← 1 →