FAST CHARGE COLLECTION IN GAAS-MESFETS

被引：27

作者：

MCMORROW, D

KNUDSON, AR

CAMPBELL, AB

机构：

[1] Naval Research Laboratory, Washington

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/23.101207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-resolved charge collection measurements on 1 µm gate length digital GaAs MESFETs with a variety of energetic ions and picosecond laser pulses exhibit risetimes as short as 25 ps with pulsewidths of ~35 ps. Evidence is presented for the presence of three distinct-timescale charge collection processes, with time constants ranging from less than 25 ps to >1 µs. The effects of radiation damage on the charge-collection transients are presented, and the use of above band-gap picosecond laser excitation is demonstrated as a viable alternative to ion excitation for characterization of the dynamical response of high-frequency, radiation-sensitive devices to rapid charge deposition. © 1990 IEEE

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页码：1902 / 1908

页数：7

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