GAAS-MESFET DEVICE DEPENDENCES ON ION-IMPLANT TILT AND ROTATION ANGLES

被引：7

作者：

ROSENBLATT, DH ^{[1
]}

HITCHENS, WR ^{[1
]}

ANHOLT, RE ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] SOLID STATE ELECTR LAB,STANFORD,CA 94305

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 03期

关键词：

D O I：

10.1109/55.2068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：139 / 141

页数：3

共 8 条

[1]

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[2]

ANHOLT R, IN PRESS J APPL PHYS

[3]

ANHOLT R, IN PRESS ION IMPLANT

[4] PLANAR AND RESIDUAL CHANNELING OF SI+ IMPLANTS IN GAAS [J].

BLUNT, RT ;

DAVIES, P .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1015-1018

[5] CHANNELING EFFECT FOR LOW-ENERGY ION-IMPLANTATION IN SI [J].

CHO, K ;

ALLEN, WR ;

FINSTAD, TG ;

CHU, WK ;

LIU, J ;

WORTMAN, JJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :265-272

[6] PROFILE STUDIES OF ION-IMPLANTED MESFETS [J].

GOLIO, JMM ;

TREW, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1844-1849

[7]

Kasahara J., 1985, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1985 (Cat. No.85CH2182-4), P37

[8] CHANNELING OF IONS NEAR THE SILICON (001) AXIS [J].

ZIEGLER, JF ;

LEVER, RF .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :358-360

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