MENDING OF RECOMBINANT FAULTS BY HYDROGEN IN LAYERS OF RAD POLYCRYSTALLINE SILICON

被引：13

作者：

AUCOUTURIER, M ^{[1
]}

RALLON, O ^{[1
]}

MAUTREF, M ^{[1
]}

BELOUET, C ^{[1
]}

机构：

[1] CO GEN ELECT,CTR RECH,LABS MARCOUSSIS,F-91460 MARCOUSSIS,FRANCE

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期

关键词：

D O I：

10.1051/jphyscol:1982116

中图分类号：

学科分类号：

摘要：

引用

页码：117 / 123

页数：7

共 17 条

[1]

BELOUET C, 1979, 2ND P EC PHOT SOL EN, P114

[2]

CHARI A, 1980, THESIS ORSAY

[3]

CHENE J, 1977, MET CORROS-IND, V623, P262

[4] POLYCRYSTALLINE SILICON SOLAR CELLS ON LOW-COST FOREIGN SUBSTRATES [J].

CHU, TL ;

LIEN, JC ;

MOLLENKOPF, HC ;

CHU, SC ;

HEIZER, KW ;

VOLTMER, FW ;

WAKEFIELD, GF .

SOLAR ENERGY, 1975, 17 (04) :229-235

[5]

CULLEN GW, 1980, J CRYSTAL GROWTH, V50

[6] EFFECT OF GRAIN-BOUNDARIES IN SILICON ON MINORITY-CARRIER DIFFUSION LENGTH AND SOLAR-CELL EFFICIENCY [J].

DAUD, T ;

KOLIWAD, KM ;

ALLEN, FG .

APPLIED PHYSICS LETTERS, 1978, 33 (12) :1009-1011

[7] TRAP SATURATION IN SILICON SOLAR CELLS [J].

FABRE, E ;

MAUTREF, M ;

MIRCEA, A .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :239-241

[8]

JOHAN A, 1979, 2ND P EC PHOT EN C W, P750

[9]

MATARE HF, 1971, DEFECT ELECTRONICS S

[10] ELECTRONIC-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J].

OUALID, J ;

AMZIL, H ;

CREST, JP ;

DUGAS, J ;

MATHIAN, G ;

ZEHAF, M ;

MARTINUZZI, S .

JOURNAL DE PHYSIQUE, 1982, 43 (NC1) :313-318

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