HOT-CARRIER DETRAPPING MECHANISMS IN MOS DEVICES

被引：7

作者：

PAGADUAN, FE

HAMADA, A

YANG, CY

TAKEDA, E

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.L2047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2047 / L2049

页数：3

共 9 条

[1] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION [J].

HSU, FC ;

TAM, S .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :50-52

[2]

HU C, 1989, VLSI ELECTRONICS MIC, V18

[3]

KOYANAGI M, 1986, 18TH C SOL STAT DEV, P475

[4]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[5] RADIATION-INDUCED INTERFACE TRAPS IN MO/SIO2/SI CAPACITORS [J].

NISHIOKA, Y ;

DASILVA, EF ;

MA, TP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1166-1171

[6] TIME-DEPENDENT EVOLUTION OF INTERFACE TRAPS IN HOT-ELECTRON DAMAGED METAL/SIO2/SI CAPACITORS [J].

NISHIOKA, Y ;

DASILVA, EF ;

MA, TP .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (12) :566-568

[7]

PAGADUAN FE, 1989, 21ST C SOL STAT DEV, P469

[8] COMPARISON OF CHARACTERISTICS OF N-CHANNEL AND P-CHANNEL MOSFETS FOR VLSIS [J].

TAKEDA, E ;

NAKAGOME, Y ;

KUME, H ;

SUZUKI, N ;

ASAI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) :675-680

[9]

TAKEDA E, 1987, HOT CARRIER EFFECT

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