ELECTRICAL-CONDUCTIVITY MECHANISMS IN AUXSI1-X AMORPHOUS-ALLOYS

被引:17
作者
AUDOUARD, A
KAZOUN, A
CHERRADI, N
MARCHAL, G
GERL, M
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1989年 / 59卷 / 02期
关键词
D O I
10.1080/13642818908220172
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:207 / 220
页数:14
相关论文
共 32 条
[11]   TEMPERATURE AND THICKNESS DEPENDENCE OF LOW-TEMPERATURE TRANSPORT IN AMORPHOUS SILICON THIN-FILMS - COMPARISON TO AMORPHOUS-GERMANIUM [J].
KNOTEK, ML .
SOLID STATE COMMUNICATIONS, 1975, 17 (11) :1431-1433
[12]  
MACNEIL J, 1983, J NONCRYSTALLINE SOL, V59, P145
[13]   EXPERIMENTAL-STUDY OF THE DC CONDUCTIVITY MECHANISMS IN AMORPHOUS SIXSN1-X ALLOYS [J].
MALOUFI, N ;
AUDOUARD, A ;
PIECUCH, M ;
VERGNAT, M ;
MARCHAL, G ;
GERL, M .
PHYSICAL REVIEW B, 1988, 37 (15) :8867-8874
[14]   DC CONDUCTIVITY MECHANISMS IN AMORPHOUS GROUP-IV SEMICONDUCTORS [J].
MALOUFI, N ;
AUDOUARD, A ;
PIECUCH, M ;
MARCHAL, G .
PHYSICAL REVIEW LETTERS, 1986, 56 (21) :2307-2309
[15]   PHYSICAL STUDIES OF AU-CH1-SI1-CH1 AMORPHOUS-ALLOYS [J].
MANGIN, P ;
MARCHAL, G ;
MOUREY, C ;
JANOT, C .
PHYSICAL REVIEW B, 1980, 21 (08) :3047-3056
[16]   CRYSTALLIZATION OF AUXSI1-X AMORPHOUS-ALLOYS [J].
MARCHAL, G ;
MANGIN, P ;
JANOT, C .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01) :81-94
[17]  
MASSENET O, 1974, J PHYS, V35, P279
[18]   IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J].
MILLER, A ;
ABRAHAMS, E .
PHYSICAL REVIEW, 1960, 120 (03) :745-755
[19]   THE METAL-SEMICONDUCTOR TRANSITION IN AMORPHOUS SI1-XCRX FILMS .2. RANGE OF VALIDITY OF THE SCALING BEHAVIOR OF THE CONDUCTIVITY, SIGMA(T,X) = SIGMA(T/T0(X)), IN THE SEMICONDUCTING REGION AND DETERMINATION OF THE MINIMUM METALLIC CONDUCTIVITY FROM SIGMA(T,X) IN THE METALLIC REGIONF [J].
MOBIUS, A ;
VINZELBERG, H ;
GLADUN, C ;
HEINRICH, A ;
ELEFANT, D ;
SCHUMANN, J ;
ZIES, G .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (17) :3337-3355
[20]   THE METAL-SEMICONDUCTOR TRANSITION IN 3-DIMENSIONAL DISORDERED-SYSTEMS REANALYSIS OF RECENT EXPERIMENTS FOR AND AGAINST MINIMUM METALLIC CONDUCTIVITY [J].
MOBIUS, A .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (24) :4639-4670