ION-BEAM CONTACTING OF SILICON .1. ALUMINUM IN PARA-SILICON

被引：4

作者：

KLOSE, H

MERTENS, A

REETZ, R

TANG, N

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 77卷 / 01期

关键词：

D O I：

10.1002/pssa.2210770128

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：233 / 239

页数：7

共 14 条

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MERTENS, A ;

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