EELS OF THICK SPECIMENS

被引：19

作者：

EGERTON, RF ^{[1
]}

YANG, YY ^{[1
]}

CHEN, FYY ^{[1
]}

机构：

[1] SUNY STONY BROOK,DEPT MAT SCI,STONY BROOK,NY 11794

来源：

ULTRAMICROSCOPY | 1991年 / 38卷 / 3-4期

关键词：

D O I：

10.1016/0304-3991(91)90169-7

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Measurements on higher-energy ionization edges (above 1000 eV) demonstrate the possibility of elemental analysis of relatively thick specimens by electron energy-loss spectroscopy. The silicon K-edge is found to have a jump ratio as high as 1.5 for specimens 500 nm in thickness.

引用

页码：349 / 352

页数：4

共 9 条

[1] AHN CC, 1992, APPLICATIONS TRANSMI
[2] CORRECTING ELECTRON-ENERGY LOSS SPECTRA FOR ARTIFACTS INTRODUCED BY A SERIAL DATA-COLLECTION SYSTEM
CRAVEN, AJ
BUGGY, TW
[J]. JOURNAL OF MICROSCOPY-OXFORD, 1984, 136 (NOV): : 227 - 239
[3] DESIGN CONSIDERATIONS AND PERFORMANCE OF AN ANALYTICAL STEM
CRAVEN, AJ
BUGGY, TW
[J]. ULTRAMICROSCOPY, 1981, 7 (01) : 27 - 37
[4] MASS-THICKNESS DETERMINATION BY BETHE-SUM-RULE NORMALIZATION OF THE ELECTRON ENERGY-LOSS SPECTRUM
CROZIER, PA
EGERTON, RF
[J]. ULTRAMICROSCOPY, 1989, 27 (01) : 9 - 18
[5] EGERTOBN RF, 1986, ELECTRON ENERGY LOSS, P201
[6] LEAPMAN RD, 1992, APPLICATIONS TRANSMI
[7] ON THE EFFECT OF OBJECTIVE LENS CHROMATIC ABERRATION ON QUANTITATIVE ELECTRON-ENERGY-LOSS SPECTROSCOPY (EELS)
TITCHMARSH, JM
MALIS, TF
[J]. ULTRAMICROSCOPY, 1989, 28 (1-4) : 277 - 282
[8] YANG YY, UNPUB J ELECTRON MIC
[9] [No title captured]

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