COULOMB-BLOCKADE OSCILLATIONS IN THE CONDUCTANCE OF A SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR POINT CONTACT

被引：26

作者：

DEGRAAF, C ^{[1
]}

CARO, J ^{[1
]}

RADELAAR, S ^{[1
]}

LAUER, V ^{[1
]}

HEYERS, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN, INST SEMICOND ELECTR, W-5100 AACHEN, GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.44.9072

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low-temperature conductance of a point contact in a Si metal-oxide-semiconductor field-effect transistor shows periodic oscillations just above pinchoff. The experimental results on the oscillations quantitatively agree well with the model of the Coulomb blockade of resonant tunneling.

引用

页码：9072 / 9075

页数：4

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