WAFER CHARGING CONTROL IN THE 160-XP HIGH-CURRENT IMPLANTER

被引：7

作者：

MCKENNA, CM ^{[1
]}

PEDERSEN, BO ^{[1
]}

LEE, JK ^{[1
]}

OUTCAULT, RF ^{[1
]}

KIKUCHI, S ^{[1
]}

机构：

[1] TOKYO ELECTRON LTD,FUCHU,TOKYO 183,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90230-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：492 / 496

页数：5

共 14 条

[1]

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[2] A STUDY OF WAFER AND DEVICE CHARGING DURING HIGH-CURRENT ION-IMPLANTATION [J].

BASRA, VK ;

MCKENNA, CM ;

FELCH, SB .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :360-365

[3]

GAT A, 1985, MAY SEM INT, P120

[4]

HORI T, 1987, MAY IEDM, P570

[5]

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[6] HIGH-CURRENT DOSIMETRY TECHNIQUES [J].

MCKENNA, CM .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 44 (1-4) :93-110

[7] A NEW COMPUTER DESIGNED FARADAY SYSTEM FOR HIGH-CURRENT ION-IMPLANTATION SYSTEMS [J].

OUTCAULT, R ;

MCKENNA, C ;

ROBERTSON, T ;

BIONDO, L .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :354-359

[8]

TSUKAMOTO K, 1987, MAY IEDM, P328

[9]

WILSON R, 1973, ION BEAMS, P452

[10]

WOLTERS DR, 1985, PHILIPS J RES, V40, P137

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