SMALL-AREA DEPTH PROFILING IN A QUADRUPOLE BASED SIMS INSTRUMENT

被引:9
作者
WITTMAACK, K [1 ]
机构
[1] ATOMIKA INSTRUMENTS GMBH,D-85764 OBERSCHLEISSHEIM,GERMANY
来源
INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES | 1995年 / 143卷
关键词
SIMS; SMALL-AREA DEPTH PROFILING;
D O I
10.1016/0168-1176(94)04114-M
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
The dynamic range, the erosion rate and the depth resolution achievable in small-area SIMS depth profiling has been studied using the quadrupole based ion microprobe ATOMIKA 4000. It was found that for a given object aperture of the oxygen or cesium ion gun the beam diameter is essentially independent of the beam energy (1.5-12 keV). Most of the results presented here relate to primary ion beams with a diameter between 25 and 30 mu m. Dynamic ranges up to 10(6) were obtained with delta-doped and ion-implanted samples at raster sizes between 140 and 160 mu m, even at the lowest beam energies. The excellent instrument performance was used to determine the energy dependence of the decay length for germanium in silicon. High speed depth profiling of thick layers or deep concentration distributions could be achieved with oxygen primary ions at 12 keV, in which case the mean current density in the raster scanned area was up to 3.5 mA cm(-2). The advantages of small-area depth profiling are also illustrated for vacuum-sensitive impurities like carbon and oxygen, analyzed under cesium bombardment.
引用
收藏
页码:19 / 27
页数:9
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