THE SOURCES FOR CONTAMINANTS IN THE TRACE ANALYSIS OF CARBON IN GAAS BY SECONDARY ION MASS-SPECTROMETRY

被引：22

作者：

KOBAYASHI, J

NAKAJIMA, M

ISHIDA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.574974

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：86 / 92

页数：7

共 13 条

[1] AKIMOTO K, 1983, APPL PHYS LETT, V43, P1062, DOI 10.1063/1.94236
[2] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
BROZEL, MR
CLEGG, JB
NEWMAN, RC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339
[3] CORRELATION OF THRESHOLD VOLTAGE OF IMPLANTED FIELD-EFFECT TRANSISTORS AND CARBON IN GAAS SUBSTRATES
CHEN, RT
HOLMES, DE
ASBECK, PM
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 459 - 461
[4] CLEGG JB, 1982, SEMIINSULATING 3 5 M, P80
[5] QUANTITATIVE-ANALYSIS OF CARBON IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS
HOMMA, Y
ISHII, Y
KOBAYASHI, T
OSAKA, J
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2931 - 2935
[6] ANALYSIS OF CARBON AND OXYGEN IN GAAS USING A SECONDARY ION MASS-SPECTROMETER EQUIPPED WITH A 20-K-CRYOPANEL PUMPING SYSTEM
HOMMA, Y
ISHII, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (02): : 356 - 360
[7] MCHUGH JM, 1975, METHODS SURFACE ANAL, P233
[8] SIMULTANEOUS CHARGED-PARTICLE ACTIVATION-ANALYSIS OF CARBON AND BORON IN GALLIUM-ARSENIDE
NOZAKI, T
ITOH, Y
OHKUBO, Y
KIMURA, T
FUKUSHIMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10): : L801 - L802
[9] EFFECT OF CARBON CONCENTRATION ON THERMAL-CONVERSION IN SEMIINSULATING GAAS
OBOKATA, T
OKADA, H
KATSUMATA, T
FUKUDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L179 - L181
[10] PRUTTON M, 1961, HYOMEN NO BUTSURI