ANGLE-RESOLVED PHOTOEMISSION-STUDY OF THIN MOLECULAR-BEAM-EPITAXY-GROWN ALPHA-SN1-XGEX FILMS WITH X-APPROXIMATELY 0.5

被引：36

作者：

HOCHST, H

ENGELHARDT, MA

HERNANDEZCALDERON, I

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.40.9703

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9703 / 9708

页数：6

共 35 条

[1] RECENT DEVELOPMENTS IN THE STRAINED LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J].

BEAN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1427-1429

[2]

BUSCH GA, 1961, SOLID STATE PHYS, V2, P1

[3] USE OF HYDROGENATION IN THE STUDY OF THE PROPERTIES OF AMORPHOUS-GERMANIUM TIN ALLOYS [J].

CHAMBOULEYRON, I ;

MARQUES, FC .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1591-1597

[4] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[5] ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHIANG, TC ;

LUDEKE, R ;

AONO, M ;

LANDGREN, G ;

HIMPSEL, FJ ;

EASTMAN, DE .

PHYSICAL REVIEW B, 1983, 27 (08) :4770-4778

[6]

DICENZO SB, 1985, PHYS REV B, V32, P2330

[7] GERMANIUM-STABILIZED GRAY TIN [J].

EWALD, AW .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (11) :1436-1437

[8] THE GROWTH OF METASTABLE, HETERO-EPITAXIAL FILMS OF ALPHA-SN BY METAL BEAM EPITAXY [J].

FARROW, RFC ;

ROBERTSON, DS ;

WILLIAMS, GM ;

CULLIS, AG ;

JONES, GR ;

YOUNG, IM ;

DENNIS, PNJ .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :507-518

[9] THE STABILIZATION OF METASTABLE PHASES BY EPITAXY [J].

FARROW, RFC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :222-228

[10]

HERNANDEZCALDER.I, 1983, PHYS REV B, V25, P4961

← 1 2 3 4 →