GAAS-ON-SI MODULATOR USING A BURIED SILICIDE REFLECTOR

被引：5

作者：

GOOSSEN, KW ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

WHITE, AE ^{[1
]}

SHORT, KT ^{[1
]}

JAN, WY ^{[1
]}

WALKER, JA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 02期

关键词：

D O I：

10.1109/68.122341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have produced a surface-normal GaAs quantum-well absorption modulator atop a silicon wafer that has been implanted with Co and annealed to form a silicide layer. The silicide layer functions as a mirror allowing reflection mode operation. This substantially reduces the thickness of the modulator compared to devices with AlGaAs-AlAs multilayer reflector stacks. We obtained a contrast ratio of 2.5 with 25 V operation.

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收藏

页码：140 / 142

页数：3

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